Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Cubic GaN/AlGaN based quantum wells optimized for applications to tunable mid-infrared photodetectors

We propose a method which delivers optimal cubic GaN/AlGaN quantum well (QW) profiles such that both the Stark effect and peak intersubband absorption from the ground to the first excited electronic state, in a prescribed range of bias electric fields, are maximized. Our method relies on the Genetic Algorithm which finds globally optimal structures with a predefined number of embedded layers. W...

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a nov...

GaN/AlGaN strain-balanced heterostructures for near-IR quantum well photodetectors: Final report Contract: FA8655-02-M4006

This is the final report for a 1-year project funded by the European Office of Research and Development (EOARD). In this work GaN/AlGaN strain-balanced heterostructures have been designed for near-infrared absorption through intersubband transitions. By making use of existing collaborations with workers at the University of Sheffield and UMIST the semiconductor samples have been grown, characte...

Increased normal incidence photocurrent in quantum dot infrared photodetectors